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PDF G20N60HS Data sheet ( Hoja de datos )
| Número de pieza | G20N60HS | |
| Descripción | High Speed IGBT | |
| Fabricantes | Infineon | |
| Logotipo |  |
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SGP20N60HS
SGW20N60HS
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
PG-TO-220-3-1
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
VCE
IC
Eoff
Tj
Marking
Package
SGP20N60HS 600V 20 240µJ 150°C G20N60HS PG-TO-220-3-1
SGW20N60HS 600V 20 240µJ 150°C G20N60HS PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Avalanche energy single pulse
IC = 20A, VCC=50V, RGE=25Ω
start TJ=25°C
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
Short circuit withstand time2)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
EAS
VGE
tSC
Ptot
Tj ,
Tstg
Tj(tl)
-
600
36
20
80
80
115
±20
±30
10
178
-55...+150
175
260
Unit
V
A
mJ
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev 2.5 Nov 09
Free Datasheet http://www.Datasheet4U.com
1 page  
50A
40A
30A
20A
VGE=20V
15V
13V
11V
9V
7V
5V
10A
0A
0V 2V 4V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
SGP20N60HS
SGW20N60HS
50A
40A
30A
20A
VGE=20V
15V
13V
11V
9V
7V
5V
10A
0A
0V 2V 4V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 150°C)
40A
TJ=-55°C
25°C
150°C
20A
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=10V)
5,5V
5,0V
4,5V
4,0V
IC=40A
3,5V
3,0V
IC=20A
2,5V
2,0V
IC=10A
1,5V
1,0V
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev 2.5 Nov 09
Free Datasheet http://www.Datasheet4U.com
5 Page 
SGP20N60HS
SGW20N60HS
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Power Semiconductors
11
Figure E. Dynamic test circuit
Leakage inductance Lσ =60nH
a nd Stray capacity Cσ =40pF.
Rev 2.5 Nov 09
Free Datasheet http://www.Datasheet4U.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet G20N60HS.PDF ] | |
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