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Número de pieza | RQ3G100GN | |
Descripción | N-Channel 40V 10A Power MOSFET | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RQ3G100GN (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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RQ3G100GN
Nch 40V 10A Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
40V
14.3mΩ
±10A
2W
lFeatures
1) Low on - resistance.
2) High Power Package (HSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
HSMT8
lInner circuit
Datasheet
lApplication
Switching
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Range of storage temperature
lPackaging specifications
Packing
Reel size (mm)
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
330
12
3000
TB
G100GN
Symbol
VDSS
ID
ID,pulse*1
VGSS
EAS*2
IAS*2
PD*3
Tj
Tstg
Value
40
±10
±40
±20
15.6
10
2
150
-55 to +150
Unit
V
A
A
V
mJ
A
W
℃
℃
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
20140328 - Rev.002
1 page Free Datasheet http://www.Datasheet4U.com
RQ3G100GN
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Datasheet
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
Temperature
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/11
20140328 - Rev.002
5 Page Free Datasheet http://www.Datasheet4U.com
RQ3G100GN
lDimensions
Datasheet
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
11/11
20140328 - Rev.002
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet RQ3G100GN.PDF ] |
Número de pieza | Descripción | Fabricantes |
RQ3G100GN | N-Channel 40V 10A Power MOSFET | ROHM Semiconductor |
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