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Secos - PNP Silicon General Purpose Transistor

Numéro de référence A1036
Description PNP Silicon General Purpose Transistor
Fabricant Secos 
Logo Secos 





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A1036 fiche technique
Elektronische Bauelemente
2SA1036
-0.5A, -40V
PNP Silicon General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
IC Max.= -500 mA
Low VCE(sat). Ideal for low-voltage operation.
CLASSIFICATION OF hFE
Product-Rank 2SA1036-P
Range
82~180
Marking
HP
2SA1036-Q
120~270
HQ
2SA1036-R
180~390
HR
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7’ inch
A
L
3
Top View
12
KE
SOT-23
CB
1
3
2
F
REF.
A
B
C
D
E
F
D
GH
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
J
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Power Dissipation
Junction & Storage Temperature
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
-40
-32
-5
-500
150
150, -55 ~ 150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ. Max. Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
hFE
fT
COB
-40
-32
-5
-
-
-
82
-
-
- -V
- -V
- -V
- -1 μA
- -1 μA
- -0.4 V
- 390
200 - MHz
7 - pF
Test Conditions
IC=-100μA, IE=0
IC=-1mA, IB=0
IE=-100μA, IC=0
VCB=-20V, IE=0
VEB= -4V, IC=0
IC=-100mA, IB=-10mA
VCE=-3V, IC=-10mA
VCE=-5V, IC=-20mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
31-Dec-2010 Rev. B
Any changes of specification will not be informed individually.
http://www.Datasheet4U.com
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