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Numéro de référence | S9011 | ||
Description | NPN Silicon Epitaxial Planar Transistor | ||
Fabricant | BL | ||
Logo | |||
1 Page
BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Collec tor Current.(IC= 30mA)
z Power dissipation.(PC=200mW)
APPLICATIONS
Pb
Lead-free
z AM converter, AM/FM if amplifier general purpose
transistor.
Production specification
S 9011
ORDERING INFORMATION
Type No.
Marking
S 9011
1T
SOT-23
Package Code
S OT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
PC Collector Dissipation
Tj,Tstg
Junction and Storage Temperature
Value
50 V
30 V
5V
30 mA
200 mW
-55~150
Units
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter S
ymbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0 50
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO
V(BR)EBO
IC=0.1mA,IB=0 30
IE=100μA,IC=0
5
V
V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
VCB=50V,IE=0
0.1 μA
VEB=5V,IC=0
0.1 μA
VCE=5V,IC=1mA 28
IC=10mA, IB= 1mA
198
0.3 V
VCE=5V, IC= 1mA
150
MHz
VCB=10V, IE=0,f=1MHz
4 pF
Document number: BL/SSSTC126
Rev.A
www.galaxycn.com
1
http://www.Datasheet4U.com
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Pages | Pages 2 | ||
Télécharger | [ S9011 ] |
No | Description détaillée | Fabricant |
S9011 | NPN Transistor | WEJ |
S9011 | NPN Silicon Epitaxial Planar Transistor | BL |
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