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PDF 13009L Data sheet ( Hoja de datos )
| Número de pieza | 13009L | |
| Descripción | KSE13009L | |
| Fabricantes | Fairchild Semiconductor | |
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KSE13009L
High Voltage Switch Mode Applications
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
NPN Silicon Transistor
1 TO-3P
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
V CEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
700
400
9
12
24
6
130
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
IEBO
hFE
Collector-Emitter Sustaining Voltage
Emitter Cut-off Current
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain Bandwidth Product
tON Turn ON Time
tSTG
Storage Time
tF Fall Time
* Pulse test: PW≤300µs, Duty cycle≤2% Pulse
IC = 10mA, IB = 0
VEB = 7V, IC = 0
VCE = 5V, IC = 5A
VCE = 5V, IC = 8A
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
IC = 12A, IB = 3A
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
VCB = 10V , f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC =125V, IC = 8A
IB1 = - IB2 = 1.6A
RL = 15,6Ω
Min.
400
8
6
4
Typ.
180
Max.
1
40
30
1
1.5
3
1.2
1.6
1.1
3
0.7
Units
V
mA
V
V
V
V
V
pF
MHz
µs
µs
µs
©2000 Fairchild Semiconductor International
Rev. A, February 2000
http://www.Datasheet4U.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 13009L.PDF ] | |
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