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AT45DB041E fiches techniques PDF

Adesto - 1.65V Minimum SPI Serial Flash Memory

Numéro de référence AT45DB041E
Description 1.65V Minimum SPI Serial Flash Memory
Fabricant Adesto 
Logo Adesto 





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AT45DB041E fiche technique
AT45DB041E
4-Mbit DataFlash (with Extra 128-Kbits), 1.65V Minimum
SPI Serial Flash Memory
Features
Single 1.65V - 3.6V supply
Serial Peripheral Interface (SPI) compatible
Supports SPI modes 0 and 3
Supports RapidSoperation
Continuous read capability through entire array
Up to 85MHz
Low-power read option up to 15 MHz
Clock-to-output time (tV) of 6ns maximum
User configurable page size
256 bytes per page
264 bytes per page (default)
Page size can be factory pre-configured for 256 bytes
Two fully independent SRAM data buffers (256/264 bytes)
Allows receiving data while reprogramming the main memory array
Flexible programming options
Byte/Page Program (1 to 256/264 bytes) directly into main memory
Buffer Write
Buffer to Main Memory Page Program
Flexible erase options
Page Erase (256/264 bytes)
Block Erase (2KB)
Sector Erase (64KB)
Chip Erase (4-Mbits)
Program and Erase Suspend/Resume
Advanced hardware and software data protection features
Individual sector protection
Individual sector lockdown to make any sector permanently read-only
128-byte, One-Time Programmable (OTP) Security Register
64 bytes factory programmed with a unique identifier
64 bytes user programmable
Hardware and software controlled reset options
JEDEC Standard Manufacturer and Device ID Read
Low-power dissipation
400nA Ultra-Deep Power-Down current (typical)
3μA Deep Power-Down current (typical)
25μA Standby current (typical at 20MHz)
11mA Active Read current (typical)
Endurance: 100,000 program/erase cycles per page minimum
Data retention: 20 years
Complies with full industrial temperature range
Green (Pb/Halide-free/RoHS compliant) packaging options
8-lead SOIC (0.150" wide and 0.208" wide)
8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
9-ball Ultra-thin UBGA (6 x 6 x 0.6mm)
8783F–DFLASH–10/2013
http://www.Datasheet4U.com

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