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PDF AT28C256 Data sheet ( Hoja de datos )
| Número de pieza | AT28C256 | |
| Descripción | 256K (32K x 8) Paged Parallel EEPROM | |
| Fabricantes | ATMEL Corporation | |
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Features
• Fast Read Access Time – 150 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
• Fast Write Cycle Times
– Page Write Cycle Time: 3 ms or 10 ms Maximum
– 1 to 64-byte Page Write Operation
• Low Power Dissipation
– 50 mA Active Current
– 200 µA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 104 or 105 Cycles
– Data Retention: 10 Years
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-wide Pinout
• Full Military and Industrial Temperature Ranges
• Green (Pb/Halide-free) Packaging Option
256K (32K x 8)
Paged Parallel
EEPROM
AT28C256
1. Description
The AT28C256 is a high-performance electrically erasable and programmable read-
only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-
tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access
times to 150 ns with power dissipation of just 440 mW. When the device is deselected,
the CMOS standby current is less than 200 µA.
The AT28C256 is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to
64 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by DATA Polling of I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s AT28C256 has additional features to ensure high quality and manufacturabil-
ity. The device utilizes internal error correction for extended endurance and improved
data retention characteristics. An optional software data protection mechanism is
available to guard against inadvertent writes. The device also includes an extra
64 bytes of EEPROM for device identification or tracking.
0006M–PEEPR–12/09
1 page  
AT28C256
5. DC and AC Operating Range
Operating Temperature
(Case)
VCC Power Supply
Ind.
Mil.
AT28C256-15
-40°C - 85°C
-55°C - 125°C
5V ± 10%
6. Operating Modes
Mode
CE
Read
Write(2)
Standby/Write Inhibit
Write Inhibit
VIL
VIL
VIH
X
Write Inhibit
X
Output Disable
X
Chip Erase
Notes: 1. X can be VIL or VIH.
2. Refer to AC programming waveforms.
VIL
3. VH = 12.0V ± 0.5V.
7. Absolute Maximum Ratings*
Temperature under Bias ................................ -55°C to +125°C
Storage Temperature..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V
AT28C256-20
-55°C - 125°C
5V ± 10%
AT28C256-25
-55°C - 125°C
5V ± 10%
AT28C256-35
-55°C - 125°C
5V ± 10%
OE
VIL
VIH
X(1)
X
VIL
VIH
VH(3)
WE I/O
VIH DOUT
VIL DIN
X High Z
VIH
X
X High Z
VIL High Z
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
8. DC Characteristics
Symbol
ILI
ILO
Parameter
Input Load Current
Output Leakage Current
ISB1 VCC Standby Current CMOS
ISB2 VCC Standby Current TTL
ICC VCC Active Current
VIL Input Low Voltage
VIH Input High Voltage
VOL Output Low Voltage
VOH Output High Voltage
Condition
VIN = 0V to VCC + 1V
VI/O = 0V to VCC
CE = VCC - 0.3V to VCC + 1V
CE = 2.0V to VCC + 1V
f = 5 MHz; IOUT = 0 mA
IOL = 2.1 mA
IOH = -400 µA
Ind.
Mil.
Min Max Units
10 µA
10 µA
200 µA
300 µA
3 mA
50 mA
0.8 V
2.0 V
0.45 V
2.4 V
0006M–PEEPR–12/09
5
5 Page 
22. Data Polling Characteristics(1)
Symbol Parameter
tDH
tOEH
tOE
tWR
Notes:
Data Hold Time
OE Hold Time
OE to Output Delay(2)
Write Recovery Time
1. These parameters are characterized and not 100% tested.
2. See“AC Read Characteristics” on page 6.
23. Data Polling Waveforms
AT28C256
Min Typ Max Units
0 ns
0 ns
ns
0 ns
24. Toggle Bit Characteristics(1)
Symbol Parameter
tDH
tOEH
tOE
tOEHP
tWR
Notes:
Data Hold Time
OE Hold Time
OE to Output Delay(2)
OE High Pulse
Write Recovery Time
1. These parameters are characterized and not 100% tested.
2. See “AC Read Characteristics” on page 6.
25. Toggle Bit Waveforms(1)(2)(3)
Min Typ Max Units
10 ns
10 ns
ns
150 ns
0 ns
Notes:
1. Toggling either OE or CE or both OE and CE will operate toggle bit.
2. Beginning and ending state of I/O6 will vary.
3. Any address location may be used but the address should not vary.
0006M–PEEPR–12/09
11
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| Páginas | Total 25 Páginas | |
| PDF Descargar | [ Datasheet AT28C256.PDF ] | |
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