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PDF NVD3055-150 Data sheet ( Hoja de datos )
| Número de pieza | NVD3055-150 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTD3055-150,
NVD3055-150
Power MOSFET
9.0 A, 60 V, N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tpv10 ms)
VDSS
VDGR
VGS
VGS
60
60
"20
"30
Vdc
Vdc
Vdc
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation
Derate above 25°C
@
TA
=
25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
L = 1.0 mH, IL(pk) = 7.75 A, VDS = 60 Vdc)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
ID
ID
IDM
PD
TJ, Tstg
EAS
9.0
3.0
27
28.8
0.19
2.1
1.5
−55 to 175
30
Adc
Apk
W
W/°C
W
W
°C
mJ
RRRqqqJJJCAA
TL
°C/W
5.2
71.4
100
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.
http://onsemi.com
9.0 AMPERES, 60 VOLTS
RDS(on) = 122 mW (Typ)
N−Channel
D
G
S
12
3
1 23
MARKING
DIAGRAMS
4
Drain
4 DPAK
CASE 369C
STYLE 2
“SURFACE MOUNT”
1
Gate
2
Drain
3
Source
4
DPAK−3
CASE 369D
STYLE 2
“STRAIGHT LEAD”
4
Drain
12 3
Gate Drain Source
3150
Y
WW
G
= Device Code
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
January, 2013 − Rev. 5
1
Publication Order Number:
NTD3055−150/D
http://www.Datasheet4U.com
1 page  
10
D = 0.5
0.2
1 0.1
0.05
0.01
SINGLE PULSE
0.1
0.00001
0.0001
NTD3055−150, NVD3055−150
0.001
0.01
t, TIME (s)
Figure 13. Thermal Response
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.1 1
10
ORDERING INFORMATION
Device
Package
Shipping†
NTD3055−150G
DPAK
(Pb−Free)
75 Units / Rail
NTD3055−150−1G
DPAK−3
(Pb−Free)
75 Units / Rail
NTD3055−150T4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD3055−150T4H
DPAK
(Halide−Free)
2500 / Tape & Reel
NVD3055−150T4G*
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
http://onsemi.com
5
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| PDF Descargar | [ Datasheet NVD3055-150.PDF ] | |
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