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Número de pieza | FQA13N50C | |
Descripción | 500V N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FQA13N50C (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! FQA13N50C
500V N-Channel MOSFET
QFET®
General Description
These N-Channel enhancem ent m ode power f ield ef fect
transistors ar e prod uced using F airchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially t ailored to
minimize on-stat e resistance, provide superior swit ching
performance, and wit hstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high ef ficiency swit ched mode pow er supplies,
active power factor cor rection, elec tronic lamp ballasts
based on half bridge topology.
Features
• 13.5A, 500V, RDS(on) = 0.48Ω @VGS = 10 V
• Low gate charge ( typical 43 nC)
• Low Crss ( typical 20pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
GSD
TO-3PN
FQA Series
G!
D
!
●
◀▲
●
●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recover y dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQA13N50C
500
13.5
8.5
54
± 30
860
13.5
21.8
4.5
218
1.56
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
Typ Max
-- 0.58
0.24 --
-- 40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004
http://www.Datasheet4U.com
1 page Gate Charge Test Circuit & Waveform
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS -V DD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FQA13N50C.PDF ] |
Número de pieza | Descripción | Fabricantes |
FQA13N50 | 500V N-Channel MOSFET | Fairchild Semiconductor |
FQA13N50C | 500V N-Channel MOSFET | Fairchild Semiconductor |
FQA13N50CF | 500V N-Channel MOSFET | Fairchild Semiconductor |
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