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Número de pieza | A2057 | |
Descripción | PNP Transistor - 2SA2057 | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de A2057 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Power Transistors
2SA2057
Silicon PNP epitaxial planar type
Power supply for audio & visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
■ Features
• High speed switching (tstg: storage time/tf: fall time is short)
• Low collector-emitter saturation voltage VCE(sat)
• Superior forward current transfer ratio hFE linearity
• TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current *
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−60
−60
−6
−3
−6
20
2.0
150
−55 to +150
Note) *: Non-repetitive peak collector current
Unit
V
V
V
A
A
W
°C
°C
2.54±0.30
5.08±0.50
123
1 : Base
2 : Collector
3 : Emitter
TO-220D-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
ICEO
IEBO
hFE1 *
hFE2
VCE(sat)
fT
ton
tstg
tf
IC = −10 mA, IB = 0
VCB = −60 V, IE = 0
VCE = −60 V, IB = 0
VEB = −6 V, IC = 0
VCE = −4 V, IC = −1 A
VCE = −4 V, IC = −3 A
IC = −3 A, IB = − 0.375 A
VCE = −10 V, IC = − 0.1 A, f = 10 MHz
IC = −1 A, Resistance loaded
IB1 = − 0.1 A, IB2 = 0.1 A
VCC = 50 V
−60
120
40
−100
−100
−1
320
− 0.5
90
0.15 0.30
0.4 0.7
0.10 0.15
V
µA
µA
mA
V
MHz
µs
µs
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1 120 to 250 160 to 320
Publication date: January 2003
SJD00284BED
1
http://www.Datasheet4U.com
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet A2057.PDF ] |
Número de pieza | Descripción | Fabricantes |
A2057 | PNP Transistor - 2SA2057 | Panasonic Semiconductor |
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