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Alpha & Omega Semiconductors - 30V N-Channel AlphaMOS

Numéro de référence AON7510
Description 30V N-Channel AlphaMOS
Fabricant Alpha & Omega Semiconductors 
Logo Alpha & Omega Semiconductors 





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AON7510 fiche technique
AON7510
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
Application
• System/Load Swithch,Battery Swithch
100% UIS Tested
100% Rg Tested
30V
75A
< 1.25m
< 2.1m
DFN 3.3x3.3
Top View
Bottom View
Pin 1
Pin 1
Top View
18
27
36
45
D
G
S
Orderable Part Number
AON7510
Package Type
DFN 3.3x3.3
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.05mH
C
ID
IDM
IDSM
IAS
EAS
VDS Spike
10µs
VSPIKE
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
75
59
300
45
35.5
60
90
36
46
18.5
4.1
2.6
-55 to 150
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
25
50
1.8
Max
30
60
2.7
Units
°C/W
°C/W
°C/W
Rev.1.0: November 2013
www.aosmd.com
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