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Freescale - 30V N-Channel AlphaMOS

Numéro de référence AON7522E
Description 30V N-Channel AlphaMOS
Fabricant Freescale 
Logo Freescale 





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AON7522E fiche technique
AON7522E
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS ( αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• ESD protection
• RoHS and Halogen-Free Compliant
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
30V
34A
< 4m
< 6.8m
Top View
S1
S2
S3
G4
8D
7D
6D
5D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
CurrentG
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.05mH C
IDSM
IAS
EAS
VDS Spike
100ns
VSPIKE
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
34
27
136
21
17
35
31
36
31
12
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
60
3.2
Max
40
75
4
D
S
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
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