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PDF STI30NM50N Data sheet ( Hoja de datos )
| Número de pieza | STI30NM50N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB30NM50N,STI30NM50N,STF30NM50N
STP30NM50N, STW30NM50N
N-channel 500 V, 0.090 Ω, 27 A MDmesh™ II Power MOSFET
D2PAK, I2PAK, TO-220FP, TO-220, TO-247
Features
Type
STB30NM50N
t(s)STI30NM50N
STF30NM50N
ucSTP30NM50N
rodSTW30NM50N
VDSS
(@Tjmax)
550 V
550 V
550 V
550 V
550 V
RDS(on)
max
< 0.115 Ω
< 0.115 Ω
< 0.115 Ω
< 0.115 Ω
< 0.115 Ω
ID
27 A
27 A
27 A(1)
27 A
27 A
1. Limited only by maximum temperature allowed
te P■ 100% avalanche tested
le■ Low input capacitance and gate charge
o■ Low gate input resistance
ObsApplication
) -■ Switching applications
ct(sDescription
duThis series of devices is designed using the
rosecond generation of MDmesh™ Technology.
PThis revolutionary Power MOSFET associates a
tenew vertical structure to the Company’s strip
layout to yield one of the world’s lowest on-
leresistance and gate charge. It is therefore suitable
sofor the most demanding high efficiency
Obconverters.
3
1
D²PAK
3
2
1
TO-247
123
I²PAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STB30NM50N
STI30NM50N
STF30NM50N
STP30NM50N
STW30NM50N
Marking
30NM50N
30NM50N
30NM50N
30NM50N
30NM50N
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
Tube
September 2008
Rev 2
1/18
www.st.com
18
http://www.Datasheet4U.com
1 page  
STB/I/F/P/W30NM50N
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 250 V, ID = 13.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
Min. Typ. Max Unit
23 ns
20 ns
115 ns
60 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
)ISD
t(sISDM (1)
cVSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 27 A, VGS = 0
dutrr
roQrr
PIRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 27 A, di/dt = 100 A/µs
VDD= 100 V Tj = 25°C
(see Figure 20)
tetrr
leQrr
oIRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 27 A, di/dt = 100 A/µs
VDD= 100 V Tj = 150°C
(see Figure 20)
s1. Pulse width limited by safe operating area
Obsolete Product(s) - Ob2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
27 A
108 A
1.5 V
480 ns
8 µC
33 A
540 ns
10 µC
35 A
5/18
5 Page 
STB/I/F/P/W30NM50N
Package mechanical data
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60 0.173
0.181
b 0.61
0.88 0.024
0.034
b1 1.14
1.70 0.044
0.066
c0 .49
0.70 0.019
0.027
D
)D1
t(sE
e
ce1
duF1
roH1
J1
PL1
teL1
leL20
L302
so∅P
Obsolete Product(s) - ObQ2
15.25
10
2.40
4.95
.23
6.20
2.40
3
3.50
3.75
.65
1.27
16.40
8.90
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
0.6
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
0.050
0.645
1.137
0.62
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.151
0.116
11/18
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| PDF Descargar | [ Datasheet STI30NM50N.PDF ] | |
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