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STP30NM50N fiches techniques PDF

STMicroelectronics - Power MOSFET ( Transistor )

Numéro de référence STP30NM50N
Description Power MOSFET ( Transistor )
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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STP30NM50N fiche technique
STB30NM50N,STI30NM50N,STF30NM50N
STP30NM50N, STW30NM50N
N-channel 500 V, 0.090 , 27 A MDmesh™ II Power MOSFET
D2PAK, I2PAK, TO-220FP, TO-220, TO-247
Features
Type
STB30NM50N
t(s)STI30NM50N
STF30NM50N
ucSTP30NM50N
rodSTW30NM50N
VDSS
(@Tjmax)
550 V
550 V
550 V
550 V
550 V
RDS(on)
max
< 0.115
< 0.115
< 0.115
< 0.115
< 0.115
ID
27 A
27 A
27 A(1)
27 A
27 A
1. Limited only by maximum temperature allowed
te P100% avalanche tested
leLow input capacitance and gate charge
oLow gate input resistance
ObsApplication
) -Switching applications
ct(sDescription
duThis series of devices is designed using the
rosecond generation of MDmesh™ Technology.
PThis revolutionary Power MOSFET associates a
tenew vertical structure to the Company’s strip
layout to yield one of the world’s lowest on-
leresistance and gate charge. It is therefore suitable
sofor the most demanding high efficiency
Obconverters.
3
1
D²PAK
3
2
1
TO-247
123
I²PAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STB30NM50N
STI30NM50N
STF30NM50N
STP30NM50N
STW30NM50N
Marking
30NM50N
30NM50N
30NM50N
30NM50N
30NM50N
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
Tube
September 2008
Rev 2
1/18
www.st.com
18
http://www.Datasheet4U.com

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