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PDF STN4NF06L Data sheet ( Hoja de datos )
| Número de pieza | STN4NF06L | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STN4NF06L
N-channel 60 V, 0.07 Ω, 4 A SOT-223
STripFET™ II Power MOSFET
Features
Order code
STN4NF06L
VDSS
60 V
RDS(on) max
< 0.1 Ω
ID
4A
■ Exceptional dv/dt capability
■ Avalanche rugged technology
■ 100% avalanche tested
■ Low threshold drive
Applications
■ Switching application
– Automotive
Description
This device is a N-channel STripFET™ II Power
MOSFET that is the latest development of
STMicroelectronics unique “single feature size”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
2
3
2
1
SOT-223
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order code
STN4NF06L
Marking
4NF06L
Package
SOT-223
Packaging
Tape and reel
April 2011
Doc ID 14639 Rev 2
1/12
www.st.com
12
http://www.Datasheet4U.com
1 page  
STN4NF06L
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 4 A, VGS=0
ISD= 4 A,
di/dt = 100 A/µs,
VDD= 25 V, Tj= 150 °C
(see Figure 16)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration= 300 µs, duty cycle 1.5%
Min. Typ. Max Unit
4A
-
16 A
-1 .5 V
50
- 88
3.5
ns
nC
A
Doc ID 14639 Rev 2
5/12
5 Page 
STN4NF06L
5 Re
vision history
Revision history
Table 9. Document revision history
Date
Revision
Changes
22-Apr-2008
1 Initial version.
29-Apr-2011
2 Figure 5, Figure 7, Figure 11 and Figure 12 have been updated.
Doc ID 14639 Rev 2
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STN4NF06L.PDF ] | |
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