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PDF STN9360 Data sheet ( Hoja de datos )
| Número de pieza | STN9360 | |
| Descripción | High voltage fast-switching PNP power transistor | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STN9360
High voltage fast-switching PNP power transistor
Features
■ High voltage capability
■ Fast switching speed
Applications
■ Lighting
■ Switch mode power supply
Description
This device is a high voltage fast-switching PNP
power transistor. It is manufactured using high
voltage multi epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining a wide RBSOA. The device is
designed for use in lighting applications and low
cost switch-mode power supplies.
Datasheet — production data
4
3
2
1
SOT-223
I
Figure 1. Internal schematic diagram
Table 1. Device summary
Part number
Marking
STN9360
N9360
Package
SOT-223
December 2012
This is information on a product in full production.
Doc ID 023213 Rev 2
Packaging
Tape and reel
1/10
www.st.com
10
http://www.Datasheet4U.com
1 page  
STN9360
Electrical characteristics
Figure 8.
1
0.1
0.01
0.01
Collector-emitter saturation voltage Figure 9.
AM16316v1
1
0.9
hfe=5
0.8
0.7
0.6
0.1
IC(A)
TJ= -55°C
TJ= 25°C
TJ=100°C
1
0.5
0.4
0.3
0.2
0.1
0
0.01
Base-emitter saturation voltage
AM16317v1
hfe=5
0.1
IC(A)
TJ= -55°C
TJ= 25°C
TJ=100°C
1
Figure 10. Base-emitter on voltage
Figure 11. Capacitance variation
AM16318v1
1
0.9
0.8 &LE
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.0001
0.001
0.01
IC(A)
VCE=5V
TJ= -55°C
TJ= 25°C
TJ=100°C
0.1
1
&RE
95ĆUHYHUVHĆYROWDJHĆ >Ć9Ć@Ć
$0Y
Figure 12. Reverse biased safe operating area
0.6
0.5
0.4
hfe = 2
Vbeoff = -5V
0.3 Rbb = 0Ω
L=1mH
Tj ≤ 125 °C
0.2
0.1
0
0 100 200 300 Vce [V] 400 500 600 700 800
AM10060v1
Doc ID 023213 Rev 2
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STN9360.PDF ] | |
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