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Número de pieza | STPSC2006CW | |
Descripción | 600V power Schottky silicon carbide diode | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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600 V power Schottky silicon carbide diode
Features
■ No or negligible reverse recovery
■ Switching behavior independent of
temperature
■ Particularly suitable in PFC boost diode
function
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
A1
K
A2
A2
K
A1
TO-247
STPSC2006CW
Table 1. Device summary
Symbol
IF(AV)
VRRM
Tj (max)
QC (typ)
Value
2 x 10 A
600 V
175 °C
12 nC
March 2011
Doc ID 018506 Rev 1
1/7
www.st.com
7
http://www.Datasheet4U.com
1 page STPSC2006CW
2 P ackage information
Package information
● Epoxy meets UL94, V0
● Cooling method: convection (C)
● Recommended torque value: 0.55 to 1.0 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6. TO-247 dimensions
V
V Dia
HA
L5
L
F1
L3
V2
F(x3)
G
L2
L4
F2 L1
F3
D
F4
M
E
Dimensions
Ref. Millimeters
Inches
Min. Max. Min. Max.
A 4.85 5.16 0.191 0.203
D 2.20 2.60 0.086 0.102
E 0.40 0.80 0.015 0.031
F 1.00 1.40 0.039 0.055
F1 3.00 typ.
0.118 typ.
F2 2.00 typ.
0.079 typ.
F3 1.90 2.40 0.075 0.094
F4 3.00 3.40 0.118 0.134
G 10.90 typ.
0.429 typ.
H 15.45 16.03 0.608 0.631
L 19.85 21.09 0.781 0.830
L1 3.70 4.30 0.146 0.169
L2 18.30 19.13 0.720 0.753
L3 14.20 20.30 0.559 0.799
L4 34.05 41.38 1.341 1.629
L5 5.35 6.30 0.211 0.248
M 2.00 3.00 0.079 0.118
V 5° typ.
5° typ.
V2 60° typ.
60° typ.
Dia. 3.55
3.65 0.140 0.144
Doc ID 018506 Rev 1
5/7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet STPSC2006CW.PDF ] |
Número de pieza | Descripción | Fabricantes |
STPSC2006CW | 600V power Schottky silicon carbide diode | STMicroelectronics |
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