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SEMTECH ELECTRONICS - NPN Silicon Epitaxial Planar Transistor

Numéro de référence BC549
Description NPN Silicon Epitaxial Planar Transistor
Fabricant SEMTECH ELECTRONICS 
Logo SEMTECH ELECTRONICS 





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BC549 fiche technique
BC546…BC550
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier application
These transistors are subdivided into three groups A,
B and C according to their current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Symbol
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
BC546
BC547, BC550
BC548, BC549
BC546
BC547, BC550
BC548, BC549
Collector Current (DC)
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
VCBO
VCEO
VEBO 6
IC 100
ICM 200
Ptot 500
Tj 150
TS
Value
80
50
30
65
45
30
- 65 to + 150
Unit
V
V
V
mA
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter Symbol
DC Current Gain
at VCE = 5 V, IC = 2 mA
Current Gain Group A
B
C
Collector Base Cutoff Current
at VCB = 30 V
Emitter Base Cutoff Current
at VEB = 5 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 10 µA
BC546
BC547, BC550
BC548, BC549
BC546
BC547, BC550
BC548, BC549
hFE
hFE
hFE
ICBO -
IEBO -
V(BR)CBO
V(BR)CEO
V(BR)EBO 6
Min.
110
200
420
80
50
30
65
45
30
Max.
220
450
800
15
100
-
-
-
-
-
-
-
Unit
-
-
-
nA
nA
V
V
V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007
http://www.Datasheet4U.com

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