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Fairchild Semiconductor - 60A Field Stop IGBT

Numéro de référence FGA60N65SMD
Description 60A Field Stop IGBT
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FGA60N65SMD fiche technique
October 2013
FGA60N65SMD
650 V, 60 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A
• Fast Switching : EOFF = 7.5 uJ/A
• Tighten Parameter Distribution
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 2nd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
G CE
TO-3PN
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
©2011 Fairchild Semiconductor Corporation
FGA60N65SMD Rev. C2
1
C
G
E
Ratings
650
± 20
± 30
120
60
180
60
30
180
600
300
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com
http://www.Datasheet4U.com

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