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C5026 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Panasonic Semiconductor - 2SC5026

شماره قطعه C5026
شرح مفصل 2SC5026
تولید کننده Panasonic Semiconductor 
آرم Panasonic Semiconductor 


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C5026 شرح
Transistor
2SC5026
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SA1890
Unit: mm
s Features
q Low collector to emitter saturation voltage VCE(sat).
q High collector to emitter voltage VCEO.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
80
V
Collector to emitter voltage VCEO
80
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1.5 A
Collector current
IC
1A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 2A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
VCBO
VCB = 40V, IE = 0
IC = 10µA, IE = 0
0.1 µA
80 V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 100mA
VCE = 2V, IC = 500mA*2
IC = 500mA, IB = 50mA*2
IC = 500mA, IB = 50mA*2
80
5
120 340
60
0.15 0.3
0.85 1.2
V
V
V
V
Transition frequency
Collector output capacitance
fT
Cob
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
120 MHz
10 20 pF
*2 Pulse measurement
*1hFE Rank classification
Rank
R
S
hFE1 120 ~ 240 170 ~ 340
1
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