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PDF P3004ND5G Data sheet ( Hoja de datos )
| Número de pieza | P3004ND5G | |
| Descripción | N- & P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
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NIKO-SEM
N- & P-Channel Enhancement Mode Field
Effect Transistor
P3004ND5G
TO-252-5
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
N-Channel 40 30mΩ
P-Channel -40 55mΩ
ID
12A
-8.8A
D1
G1
S1
D2
G2
S2
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 70 °C
Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
TL
N-Channel P-Channel UNITS
40 -40 V
±20 ±20 V
12 -8.8
8 -5.8 A
50 -50
19 -18
20 19 mJ
3
W
2.1
-55 to 150
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
TYPICAL
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
V(BR)DSS
Gate Threshold Voltage
VGS(th)
STATIC
VGS = 0V, ID = 250A
VGS = 0V, ID = -250A
VDS = VGS, ID = 250A
VDS = VGS, ID = -250A
MAXIMUM
6
42
UNITS
°C / W
°C / W
LIMITS
UNIT
MIN TYP MAX
N-Ch 40
P-Ch -40
N-Ch 1.7 2.0 3.0
P-Ch -1.7 -2.0 -3.0
V
REV 1.0
1 Oct-21-2009
1 page  
NIKO-SEM
N- & P-Channel Enhancement Mode Field
Effect Transistor
P3004ND5G
TO-252-5
Halogen-Free & Lead-Free
REV 1.0
5 Oct-21-2009
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet P3004ND5G.PDF ] | |
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