DataSheetWiki


RT100KP198CA fiches techniques PDF

MDE Semiconductor - GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

Numéro de référence RT100KP198CA
Description GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
Fabricant MDE Semiconductor 
Logo MDE Semiconductor 





1 Page

No Preview Available !





RT100KP198CA fiche technique
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414
1-800-831-4881 Email: [email protected] Web: www.mdesemiconductor.com
RT100KP SERIES
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE-28.0 TO 400 Volts
100000 Watt Peak Pulse Power
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Glass passivated junction
• 100000W Peak Pulse Power
capability on 6.4/6.9µs waveform
• Excellent clamping capability
• Repetition rate (duty cycle):0.05%
• Low incremental surge resistance
• Fast response time: typically less
than 1.0 ps from 0 volts to BV
• High temperature soldering guaranteed:
265°C/10 seconds/.375", (9.5mm) lead
length, 5lbs., (2.3kg) tension
• 100KW Tranisent Voltage Suppressor (TVS) are
designed for aircraft applications requiring high power
transient protection.This includes various treats such as
"Waveform 4" at 6.4/69 µs per RTCA/DO-160E Section 22
MECHANICAL DATA
Case:Molded plastic over glass passivated junction
Terminals: Matte Tin Plated Axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denoted positive end (cathode)
except Bipolar
Mounting Position: Any
Weight: 0.07 ounce, 2.5 gram
P-600
.360(9.1)
.340(8.6)
DIA
1.0(25.4) MIN
.360(9.1)
.340(8.6)
.052(1.3)
DIA
1.0(25.4) MIN
Dimensions in inches (milimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types RT100KP28 thru types RT1000KP400
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
RATING
Peak Pulse Power Dissipation on 6.4/6.9µs
waveform
Peak Pulse Current of on 6.4/69µs waveform
Steady State Power Dissipation at Tl=75 °C
Lead Lengths.375", (9.5mm)
Peak Forward Surge Current, 8.3ms Sine-Wave
Superimposed on Rated Load, (JEDEC Method)
SYMBOL
PPPM
IPPM
PM(AV)
IFSM
VALUE
Minimum 100000
SEE TABLE 1
8.0
400.0
UNITS
Watts
Amps
Watts
Amps
Operatings and Storage Temperature Range
Certified RoHS Compliant
TJ, TSTG
1
-55 to +175
°C
8/21/2013

PagesPages 4
Télécharger [ RT100KP198CA ]


Fiche technique recommandé

No Description détaillée Fabricant
RT100KP198CA GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR MDE Semiconductor
MDE Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche