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PDF FDS6675BZ Data sheet ( Hoja de datos )
| Número de pieza | FDS6675BZ | |
| Descripción | P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDS6675BZ
P-Channel PowerTrench® MOSFET
-30V, -11A, 13mΩ
March 2009
tm
General Description
Features
This P-Channel MOSFET is producted using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A
Max rDS(on) = 21.8mΩ at VGS = -4.5V, ID = -9A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 5.4 KV typical (note 3)
High performance trench technology for extremely low
rDS(on)
High power and current handing capability
RoHS Compliant
DD
D
D
SO-8
S SSG
5
6
7
8
4
3
2
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
PD (Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Temperature
Ratings
-30
±25
-11
-55
2.5
1.2
1.0
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance , Junction to Ambient (Note 1a)
Thermal Resistance , Junction to Case (Note 1)
50 °C/W
25 °C/W
Package Marking and Ordering Information
Device Marking
FDS6675BZ
Device
FDS6675BZ
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2009 Fairchild Semiconductor Corporation
FDS6675BZ Rev. B2
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
104
103 VGS = -10 V
102
10
1
0.5
10-4
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
10-3
10-2
10-1
1
t, PULSE WIDTH (sec)
10
Figure 13. Single Pulse Maximum Power Dissipation
102
103
2
1 DUTY CYCLE-DESCENDING ORDER
10-1
10-2
10-3
10-4
10-4
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
102
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
103
©2009 Fairchild Semiconductor Corporation
FDS6675BZ Rev.B2
5
www.fairchildsemi.com
5 Page | ||
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