(PDF) CQ223M Datasheet - 1.0 AMP TRIAC

Número de pieza	CQ223M
Descripción	1.0 AMP TRIAC
Fabricantes	Central Semiconductor
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No Preview Available ! PRELIMINARCCYQQ222233MN 1.0 AMP TRIAC 600 THRU 800 VOLTS CentralTM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223M series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C) Peak Repetitive Off-State Voltage RMS On-State Current (TC=80°C) YPeak One Cycle Surge (tp=10 ms) Peak Gate Current RAverage Gate Power Dissipation AStorage Temperature INJunction Temperature Thermal Reistance SYMBOL VDRM IT (RMS) ITSM IGM PG (AV) Tstg TJ ΘJC CQ223M 600 1.0 10 1.0 0.1 -40 to +150 -40 to +125 10 CQ223N 800 ELIMELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN PRIDRM VD=Rated VDRM TYP MAX 10 IDRM VD=Rated VDRM, TC=125°C 200 IGT VD=12V, QUAD I, II, III, IV 10 IH VD=12V 10 VGT VD=12V, RL=10Ω, QUAD I, II, III 2.0 VGT VD=12V, RL=10Ω, QUAD IV 2.5 VTM dv/dt IT=1.0A VD=2/3 VDRM, TC=125°C 5.0 2.0 UNITS V A A A W °C °C °C/W UNITS µA µA mA mA V V V V/µs R0 (10-June 2004) 1 page

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