(PDF) WNM4006 Datasheet - N-Channel MOSFET

Número de pieza	WNM4006
Descripción	N-Channel MOSFET
Fabricantes	TY Semiconductor
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No Preview Available ! VDS (V) 45 Rds(on) (ȍ) 0.126@ VGS=10V 0.142@ VGS=4.5V 0.147@ VGS=4.0V 0.208@ VGS=2.5V Descriptions The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM4006 is Pb-free. Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 Product specification WNM4006 Single N-Channel, 45V, 1.7A, Power MOSFET SOT-23 D 3 12 GS Pin configuration (Top view) W46* W46 * = Device Code = Month (A~Z) Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging Marking Order information Device Package Shipping WNM4006-3/TR SOT-23 3000/Reel&Tape http://www.twtysemi.com [email protected] 1 of 3 1 page

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PDF WNM4006 Data sheet ( Hoja de datos )