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Taiwan Semiconductor - 1.0 AMP. Surface Mount Schottky Barrier Rectifiers

Numéro de référence SS13
Description 1.0 AMP. Surface Mount Schottky Barrier Rectifiers
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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SS13 fiche technique
SS12 THRU SS110
Features
1.0 AMP. Surface Mount Schottky Barrier Rectifiers
Voltage Range
20 to 100 Volts
Current
1.0 Ampere
SMA/DO-214AC
For surface mounted application
Metal to silicon rectifier, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-O
Epitaxial construction
High temperature soldering:
260oC/ 10 seconds at terminals
.062(1.58)
.050(1.27)
.111(2.83)
.090(2.29)
.187(4.75)
.160(4.06)
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.064 gram
.103(2.61)
.078(1.99)
.056(1.41)
.035(0.90)
.008(.20)
.004(.10)
.210(5.33)
.195(4.95)
.012(.31)
.006(.15)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol SS SS SS SS SS SS SS
12 13 14 15 16 19 110
Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 90 100
Maximum RMS Voltage
VRMS 14 21 28 35 42 63 70
Maximum DC Blocking Voltage
VDC 20 30 40 50 60 90 100
Maximum Average Forward Rectified Current
at TL(See Fig. 1)
I(AV)
1.0
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load IFSM
(JEDEC method )
30
Maximum Instantaneous Forward Voltage
(Note 1) @ 1.0A
VF
0.5
0.75 0.80
Maximum DC Reverse Current @ TA =25at
Rated DC Blocking Voltage @ TA=100
IR
0.4
10
5.0
0.05
0.5
Maximum DC Reverse Current at VR=33V &
TA=50
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance ( Note 2 )
HTIR
Cj
RθJL
RθJA
-
50
28
88
5.0
Operating Temperature Range
TJ -65 to +125
-65 to +150
Storage Temperature Range
TSTG
-65 to +150
Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.2 x 0.2”(5.0 x 5.0mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Units
V
V
V
A
A
V
mA
mA
uA
pF
/W
/W
- 20 -

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