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PDF NVD5414NT4G Data sheet ( Hoja de datos )
| Número de pieza | NVD5414NT4G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTD5414N, NVD5414N
Power MOSFET
24 Amps, 60 Volts Single N−Channel
DPAK
Features
• Low RDS(on)
• High Current Capability
• Avalanche Energy Specified
• AEC Q101 Qualified − NVD5414N
• These Devices are Pb−Free and are RoHS Compliant
Applications
• LED Lighting and LED Backlight Drivers
• DC−DC Converters
• DC Motor Drivers
• Power Supplies Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage − Nonrepetitive
(TP < 10 ms)
Continuous Drain
C(Nuortreen1t)RqJC
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation
RqJC (Note 1)
Steady
State
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
60
$20
$30
24
16
55
75
−55 to
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 V, IL(pk) = 24 A,
L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
IS 24
EAS 86.4
TL 260
Unit
V
V
V
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) Steady State
(Note 1)
RqJC
RqJA
2.7 °C/W
58.6
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
http://onsemi.com
V(BR)DSS
60 V
RDS(ON) MAX
37 mW @ 10 V
ID MAX
(Note 1)
24 A
N−Channel
D
G
S
12
3
MARKING
DIAGRAMS
4
Drain
4 DPAK
CASE 369AA
STYLE 2
1
Gate
2
Drain
3
Source
5414N
Y
WW
G
= Device Code
= Year
= Work Week
= Pb−Free Device
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 1
1
Publication Order Number:
NTD5414N/D
1 page  
NTD5414N, NVD5414N
TYPICAL PERFORMANCE CURVES
100
D = 0.5
10
0.2
0.1
0.05
1 0.02
0.01
0.1
0.01 Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
Surface−Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu
0.01 0.1
t, PULSE TIME (s)
1
10 100 1000
Figure 13. Thermal Response
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NVD5414NT4G.PDF ] | |
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