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Fuji Electric - MOSFET ( Transistor ) - 2SK724

Numéro de référence K724
Description MOSFET ( Transistor ) - 2SK724
Fabricant Fuji Electric 
Logo Fuji Electric 





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K724 fiche technique
2SK724
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
F- I SERIES
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
General purpose power amplifier
Outline Drawings
TO-3P
JEDEC
EIAJ
3. Source
SC-65
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Continuous reverse drain current
Gate-source peak voltage
Max. power dissipation
Operating and storage
temperature range
Symbol
VDS
ID
ID(puls]
IDR
VGS
PD
Tch
Tstg
Rating
500
10
40
10
±20
100
+150
-55 to +150
Unit
V
A
A
A
V
W
°C
°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
(toff=td(off)+tf)
Diode forward on-voltage
Reverse recovery time
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
ton
td(off)
tf
VSD
trr
Test Conditions
ID=1mA VGS=0V
ID=10mA VDS=VGS
VDS=500V VGS=0V Tch=25°C
VGS=±20V VDS=0V
ID=5A VGS=10V
ID=5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=30V RG=50
ID=2.8A
VGS=10V
IF=2xIDR VGS=0V Tch=25°C
IF=IDR di/dt=100A/µs Tch=25°C
Thermal characteristics
Item
Thermal resistance
Symbol
Rth(ch-a)
Rth(ch-c)
Test Conditions
channel to ambient
channel to case
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Min. Typ.
500
2.1 3.0
10
10
0.5
6.0 10.0
1600
200
80
130
330
110
1.1
500
Max. Units
4.0
500
100
0.67
2400
300
120
195
430
140
1.7
V
V
µA
nA
S
pF
ns
V
ns
Min. Typ.
Max. Units
35 °C/W
1.25 °C/W
1

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