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Numéro de référence | R5007ANX | ||
Description | 10V Drive Nch MOSFET | ||
Fabricant | ROHM Semiconductor | ||
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1 Page
10V Drive Nch MOSFET
R5007ANX
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (VGSS) guaranteed to be 30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
Applications
Switching
Dimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5
2.8
(1)Base
(2)Collector
(3)Emitter
1.2
1.3
0.8
2.54 2.54
(1) (2) (3)
0.75
2.6
Packaging specifications
Package
Code
Type Basic ordering unit (pieces)
R5007ANX
Bulk
−
500
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche Current
Avalanche Energy
Total power dissipation (Tc=25°C)
VDSS
VGSS
ID
IDP
IS
ISP
∗3
∗1
∗3
∗1
IAS ∗2
EAS ∗2
PD
500
±30
±7
±28
7
28
3.5
3.2
40
Channel temperature
Tch
Range of storage temperature
Tstg
∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum tempterature allowed
150
−55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
Thermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
3.13
Unit
°C/W
Inner circuit
∗1
(1)
(1) Gate
(2) Drain
(3) Source
(2) (3)
∗1 Body Diode
www.rohm.com
○c 2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.01 - Rev.B
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Pages | Pages 6 | ||
Télécharger | [ R5007ANX ] |
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