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ROHM Semiconductor - 10V Drive Nch MOSFET

Numéro de référence R5007ANX
Description 10V Drive Nch MOSFET
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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R5007ANX fiche technique
10V Drive Nch MOSFET
R5007ANX
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (VGSS) guaranteed to be 30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
Applications
Switching
Dimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5
2.8
(1)Base
(2)Collector
(3)Emitter
1.2
1.3
0.8
2.54 2.54
(1) (2) (3)
0.75
2.6
Packaging specifications
Package
Code
Type Basic ordering unit (pieces)
R5007ANX
Bulk
500
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche Current
Avalanche Energy
Total power dissipation (Tc=25°C)
VDSS
VGSS
ID
IDP
IS
ISP
3
1
3
1
IAS 2
EAS 2
PD
500
±30
±7
±28
7
28
3.5
3.2
40
Channel temperature
Tch
Range of storage temperature
Tstg
1 Pw10μs, Duty cycle1%
2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C
3 Limited only by maximum tempterature allowed
150
55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
Thermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
3.13
Unit
°C/W
Inner circuit
1
(1)
(1) Gate
(2) Drain
(3) Source
(2) (3)
1 Body Diode
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.01 - Rev.B

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