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AT45DB041D-SSU-2.5 fiches techniques PDF

Adesto - 4-megabit 2.5-volt or 2.7-volt DataFlash

Numéro de référence AT45DB041D-SSU-2.5
Description 4-megabit 2.5-volt or 2.7-volt DataFlash
Fabricant Adesto 
Logo Adesto 





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AT45DB041D-SSU-2.5 fiche technique
Features
Single 2.5V or 2.7V to 3.6V Supply
RapidSTM Serial Interface: 66MHz Maximum Clock Frequency
– SPI Compatible Modes 0 and 3
User Configurable Page Size
– 256-Bytes per Page
– 264-Bytes per Page
– Page Size Can Be Factory Pre-configured for 256-Bytes
Page Program Operation
– Intelligent Programming Operation
– 2,048 Pages (256-/264-Bytes/Page) Main Memory
Flexible Erase Options
– Page Erase (256-Bytes)
– Block Erase (2-Kbytes)
– Sector Erase (64-Kbytes)
– Chip Erase (4Mbits)
Two SRAM Data Buffers (256-, 264-Bytes)
– Allows Receiving of Data while Reprogramming the Flash Array
Continuous Read Capability through Entire Array
– Ideal for Code Shadowing Applications
Low-power Dissipation
– 7mA Active Read Current Typical
– 25μA Standby Current Typical
– 15μA Deep Power-down Typical
Hardware and Software Data Protection Features
– Individual Sector
Sector Lockdown for Secure Code and Data Storage
– Individual Sector
Security: 128-byte Security Register
– 64-byte User Programmable Space
– Unique 64-byte Device Identifier
JEDEC Standard Manufacturer and Device ID Read
100,000 Program/Erase Cycles Per Page Minimum
Data Retention – 20 Years
Industrial Temperature Range
Green (Pb/Halide-free/RoHS Compliant) Packaging Options
4-megabit
2.5-volt or
2.7-volt
DataFlash®
AT45DB041D
(Not recommended for
new designs. Use
AT45DB041E.)
1. Description
The AT45DB041D is a 2.5V or 2.7V, serial-interface Flash memory ideally suited for a
wide variety of digital voice-, image-, program code- and data-storage applications.
The AT45DB041D supports RapidS serial interface for applications requiring very
high speed operations. RapidS serial interface is SPI compatible for frequencies up to
66MHz. Its 4,325,376-bits of memory are organized as 2,048 pages of 256-bytes or
264-bytes each. In addition to the main memory, the AT45DB041D also contains two
SRAM buffers of 256-/264-bytes each. The buffers allow the receiving of data while a
page in the main Memory is being reprogrammed, as well as writing a continuous data
stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-con-
tained three step read-modify-write operation. Unlike conventional Flash memories
that are accessed randomly with multiple address lines and a parallel interface, the
DataFlash uses a RapidS serial interface to sequentially access its data. The simple
sequential access dramatically
3595T–DFLASH–8/2013

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