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Número de pieza | NE3505M04 | |
Descripción | HETERO JUNCTION FIELD EFFECT TRANSISITOR | |
Fabricantes | California Eastern Labs | |
Logotipo | ||
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No Preview Available ! DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISITOR
NE3505M04
L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
- Super Low Noise Figure & Associated Gain :
NF=0.4dB TYP. Ga=15.5dB TYP. @f=4GHz
NF=0.35dB TYP. Ga=17dB TYP. @f=2.4GHz (Reference Only)
NF=0.45dB TYP. Ga=14dB TYP. @f=5.8GHz (Reference Only)
- Flat-lead 4-pin tin-type super mini-mold(M04) package
APPLICATIONS
- Satellite Radio(SDARS, DMB, etc.) antenna LNA
- 5.8GHz-band WLAN LNA
- LNA for Micro-wave communication system
ORDERING INFORMATION
PART NUMBER
Quantity
NE3505M04
50pcs (Non reel)
NE3505M04-T2 3 Kpcs/reel
Marking
Packaging Style
8 mm wide emboss taping
V76 1pin(source), 2pin(Drain) feed hole direction
Remark To order evaluation samples, please contact your local NEC sales office.
Part number for sample order: NE3505M04
ABSOLUTE MAXIMUM RATINGS ( TA =+ 25 °C )
PARAMETER
SYMBOL
Drain to Source Voltage
VDS
Gate to Source Voltage
VGS
Drain Current
ID
Gate Current
IG
Total Power Dissipation
Ptot
Channel Temperature
Tch
Storage Temperature
Tstg
RATINGS
4.0
-3.0
IDSS
140
125
+125
- 65 to +125
UNIT
V
V
mA
µA
mW
°C
°C
Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P*****EJ0V0PM00 (1st edition)
Date Published August 2004 CP(K)
Printed in Japan
© NEC Compound Semiconductor Devices 2004
1 page TYPICAL CHARACTERISTICS TA = +25 °C)
NE3505M04
NE3505M04 Pin vs. Pout
VDD=2V, ID=15.5mA(Non-RF), f=2.4GHz
20 30
15 25
Po(1dB)=+8.5dBm
10 20
5 15
0
-5
-10
-25 -20 -15 -10
Pin(dBm)
Pout
Ga
ID
-5
10
5
0
0
NE3505M04 Pin vs IM3
VDD=2V, ID=15.5mA(Non-RF), f=2.4GHz △f=1MHz
30
20
10
0
-10
-20
-30
-40
-50
-60
-70
-25
OIP3=20dBm
-20 -15
fH_2401
fL_2400
IMfL_2399
IMfH_2402
IIP3=3.5dBm
-10 -5
Pin(dBm)
0
5
10
5 Page Reference Data
NE3505M04
S-parameter
VDS=2V, ID=10mA
Freq
(GHz)
MAG
2.0 0.924
2.5 0.882
3.0 0.840
3.5 0.798
4.0 0.750
4.5 0.704
5.0 0.664
5.5 0.622
6.0 0.579
6.5 0.542
7.0 0.511
7.5 0.481
8.0 0.458
8.5 0.438
9.0 0.421
9.5 0.411
10.0 0.406
10.5 0.404
11.0 0.402
11.5 0.406
12.0 0.410
12.5 0.423
13.0 0.435
13.5 0.448
14.0 0.470
14.5 0.489
15.0 0.509
15.5 0.531
16.0 0.554
16.5 0.577
17.0 0.595
17.5 0.620
18.0 0.634
S11
ANG
-39.6
-48.9
-57.8
-66.6
-75.3
-83.9
-92.1
-101.6
-110.4
-119.8
-128.9
-138.4
-148.4
-157.7
-167.9
-177.7
172.5
162.9
153.3
143.7
134.7
125.8
117.5
109.1
101.6
94.4
87.6
81.4
75.4
70.1
64.8
59.6
55.4
MAG
5.060
4.875
4.730
4.556
4.375
4.200
4.053
3.879
3.718
3.565
3.424
3.289
3.157
3.041
2.932
2.823
2.725
2.634
2.548
2.464
2.386
2.309
2.235
2.161
2.089
2.017
1.949
1.880
1.812
1.748
1.684
1.621
1.564
S21
ANG
140.0
130.7
121.7
113.0
104.6
96.3
87.9
80.7
73.2
65.9
58.8
51.9
45.1
38.5
32.0
25.7
19.5
13.3
7.2
1.1
-5.0
-11.0
-16.7
-22.7
-28.6
-34.3
-40.2
-45.9
-51.5
-57.2
-62.8
-68.3
-73.8
MAG
0.055
0.067
0.078
0.088
0.097
0.106
0.114
0.121
0.128
0.135
0.141
0.147
0.153
0.159
0.165
0.171
0.177
0.183
0.188
0.194
0.200
0.205
0.211
0.216
0.222
0.226
0.231
0.235
0.239
0.242
0.245
0.248
0.251
S12
ANG
66.7
61.7
56.2
51.4
46.9
42.6
38.5
34.6
30.7
26.9
23.5
20.2
16.8
13.5
10.3
7.1
3.9
0.6
-2.7
-5.9
-9.3
-12.8
-16.1
-19.7
-23.4
-26.9
-30.7
-34.4
-38.2
-42.2
-45.9
-50.1
-53.9
MAG
0.512
0.498
0.480
0.457
0.439
0.418
0.396
0.373
0.354
0.331
0.309
0.290
0.268
0.250
0.230
0.209
0.190
0.172
0.155
0.139
0.127
0.119
0.116
0.120
0.127
0.142
0.160
0.176
0.199
0.225
0.243
0.268
0.293
S22
ANG
-28.7
-35.2
-42.0
-48.4
-54.5
-60.6
-67.0
-72.5
-78.1
-83.5
-88.7
-94.0
-99.7
-105.0
-110.4
-116.4
-123.4
-129.9
-138.7
-149.3
-161.7
-176.2
167.3
150.9
135.6
119.2
108.2
97.0
85.5
77.9
69.6
61.3
54.6
11 Page |
Páginas | Total 20 Páginas | |
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Número de pieza | Descripción | Fabricantes |
NE3505M04 | HETERO JUNCTION FIELD EFFECT TRANSISITOR | California Eastern Labs |
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