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NXP Semiconductors - MOSFET ( Transistor )

Numéro de référence NX3008PBKW
Description MOSFET ( Transistor )
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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NX3008PBKW fiche technique
NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
Rev. 1 — 1 August 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; ID = -200 mA;
Tj = 25 °C
Min Typ Max Unit
- - -30 V
-8 - 8 V
[1] - - -200 mA
- 2.8 4.1
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

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