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ME20N03 fiches techniques PDF

Matsuki - N-Channel Enhancement MOSFET

Numéro de référence ME20N03
Description N-Channel Enhancement MOSFET
Fabricant Matsuki 
Logo Matsuki 





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ME20N03 fiche technique
N-Channel Enhancement MOSFET
GENERAL DESCRIPTION
The ME20N03 is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching, and low in-line power loss are needed in a
very small outline surface mount package.
ME20N03
FEATURES
RDS(ON) 15m@VGS=10V
RDS(ON) 20m@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Desktop Computer
Video Graphic Accelerate Card
Battery Powered System
DC/DC Converter
PIN CONFIGURATION
(TO-252)
Top View
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
TC=25
TC=100
TC=25
TC=70
Thermal Resistance-Junction to Ambient(Note 2)
Thermal Resistance-Junction to Case
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
RθJC
Limit
30
±20
39(Note 1)
25
100
37
24
-55 to 150
T≦10 sec
15
Steady State
3.3
45
Note 1: Bonding wire current limit
Note 2: The device mounted on 1in2 FR4 board with 2 oz copper
Sep,2008-Ver2.0
Unit
V
V
A
A
W
℃/W
℃/W
01

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