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PDF NX1029X Data sheet ( Hoja de datos )
| Número de pieza | NX1029X | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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NX1029X
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
Rev. 1 — 12 August 2011
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra
small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV (N-channel)
and 1 kV (P-channel)
AEC-Q101 qualified
1.3 Applications
Level shifter
Power supply converter
Load switch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
TR2 (P-channel)
VDS drain-source voltage
VGS gate-source voltage
ID drain current
TR1 (N-channel)
Tj = 25 °C
VGS = -10 V; Tamb = 25 °C
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 10 V; Tamb = 25 °C
TR1 (N-channel), Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 500 mA;
pulsed; tp ≤ 300 µs;
δ ≤ 0.01 ; Tj = 25 °C
TR2 (P-channel), Static characteristics
RDSon
drain-source on-state VGS = -10 V; ID = -100 mA;
resistance
Tj = 25 °C
Min Typ Max Unit
-
-20
[1] -
-
-
-
-50 V
20 V
-170 mA
-
-20
[1] -
-
-
-
60 V
20 V
330 mA
- 1 1.6 Ω
- 4.5 7.5 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
1 page  
NXP Semiconductors
NX1029X
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
-1
ID
(A)
-10-1
-10-2
001aao140
(1)
(2)
(3)
(4)
(5)
-10-3
-10-1
-1
-10 -102
VDS (V)
IDM is single pulse
(1) tp = 1 ms
(2) tp = 10 ms
(3) DC; Tsp = 25 °C
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 4. Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Per device
Rth(j-a)
thermal resistance from junction to ambient
TR1 (N-channel)
Rth(j-a)
thermal resistance from junction to ambient
Conditions
in free air
in free air
Rth(j-sp)
thermal resistance from junction to solder
point
TR2 (P-channel)
Rth(j-a)
thermal resistance from junction to ambient
in free air
Rth(j-sp)
thermal resistance from junction to solder
point
Min Typ
[1] -
-
[1] -
[2] -
-
330
280
-
[1] -
[2] -
-
330
280
-
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Max Unit
250 K/W
380 K/W
320 K/W
115 K/W
380 K/W
320 K/W
115 K/W
NX1029X
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2011
© NXP B.V. 2011. All rights reserved.
5 of 20
5 Page 
NXP Semiconductors
3.0
VGS(th)
(V)
2.0
1.0
(1)
(2)
(3)
NX1029X
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
017aaa299
102
C
(pF)
10
(1)
(2)
(3)
017aaa046
0.0
–60
0
60 120 180
Tj (°C)
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
Fig 15. TR1: Gate-source threshold voltage as a
function of junction temperature
1
10−1
1
10 102
VDS (V)
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) Crss
Fig 16. TR1: Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
5.0
VGS
(V)
4.0
3.0
017aaa047
VDS
VGS(pl)
ID
2.0
1.0
0.0
0.0 0.2 0.4 0.6 0.8
QG (nC)
ID = 300 mA; VDS = 30 V; Tamb = 25 °C
Fig 17. TR1: Gate-source voltage as a function of gate
charge; typical values
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 18. Gate charge waveform definitions
NX1029X
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2011
© NXP B.V. 2011. All rights reserved.
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