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TJ60S04M3L fiches techniques PDF

Toshiba Semiconductor - MOSFETs

Numéro de référence TJ60S04M3L
Description MOSFETs
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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TJ60S04M3L fiche technique
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ60S04M3L
1. Applications
• Automotive
• Motor Drivers
• DC-DC Converters
• Switching Voltage Regulators
2. Features
(1) AEC-Q101 qualified
(2) Low drain-source on-resistance: RDS(ON) = 4.8 m(typ.) (VGS = -10 V)
(3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
(4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
TJ60S04M3L
DPAK+
1: Gate
2: Drain (heatsink)
3: Source
Start of commercial production
2011-03
1 2014-08-04
Rev.4.0

PagesPages 9
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