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SSF8205 fiches techniques PDF

GOOD-ARK - 20V Dual N-Channel MOSFET

Numéro de référence SSF8205
Description 20V Dual N-Channel MOSFET
Fabricant GOOD-ARK 
Logo GOOD-ARK 





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SSF8205 fiche technique
Main Product Characteristics
VDSS
20V
RDS(on) 20mΩ (typ.)
ID 4A
SOT-23-6L
Features and Benefits
Advanced trench MOSFET process technology
Ideal for battery protection, load switching and
general power management
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150°C operating temperature
SSF8205
20V Dual N-Channel MOSFET
D1
G1
G2
S1
D2
S2
Marking and Pin
Assignment
Schematic Diagram
Description
The SSF8205 utilizes the latest trench processing techniques to achieve high cell density, low on-
resistance and high repetitive avalanche rating. These features make this device extremely
efficient and reliable for use in battery protection, power switching applications and a wide variety
of other applications.
Absolute Max Ratings (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±1 0
4
25
1.25
-55 To 150
Unit
V
V
A
A
W
°C
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100 °C/W
1/8

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