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SSF8205 fiches techniques PDF

Silikron - MOSFET ( Transistor )

Numéro de référence SSF8205
Description MOSFET ( Transistor )
Fabricant Silikron 
Logo Silikron 





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SSF8205 fiche technique
Main Product Characteristics:
VDSS
20V
RDS(on) 20mohm(typ.)
ID 4A
SOT23-6
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for buttery protection, load
switching and general power management
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150operating temperature
SSF8205
D1
G1 G2
S1
D2
S2
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in buttery protection, power switching application and a wide variety of other
applications
Absolute max Rating:
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Limit
20
±10
4
25
1.25
-55 To 150
Unit
V
V
A
A
W
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100 /W
©Silikron Semiconductor CO.,LTD.
2011.05.25
www.silikron.com
Version : 2.1
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