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MCR100-8 fiches techniques PDF

SemiWell - Sensitive Gate Silicon Controlled Rectifiers

Numéro de référence MCR100-8
Description Sensitive Gate Silicon Controlled Rectifiers
Fabricant SemiWell 
Logo SemiWell 





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MCR100-8 fiche technique
SemiWell Semiconductor
Sensitive Gate
Silicon Controlled Rectifiers
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 0.8 A )
Low On-State Voltage (1.2V(Typ.)@ ITM)
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
MCR100-8
Symbol
3. Anode
2. Gate
1. Cathode
TO-92
123
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
Half Sine Wave : TC = 74 °C
All Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
PGM
PG(AV)
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TA =25°C, Pulse Width 1.0
TA =25°C, t = 8.3ms
Ratings
600
0.5
0.8
10
0.415
2
0.1
1
5.0
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
A2s
W
W
A
V
°C
°C
Oct, 2002. Rev. 2
Information offers: http://www.kkg.com.cn
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
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