(PDF) 4946 Datasheet - Dual N-Channel High Density Trench MOSFET

Número de pieza	4946
Descripción	Dual N-Channel High Density Trench MOSFET
Fabricantes	TuoFeng
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No Preview Available ! Shenzhen TuoFeng Semiconductor Technology co., LTD 4946 Dual N-Channel High Density Trench MOSFET PRODUCT SUMMARY VDSS ID RDS(on) (mΩ) Max 5.0A 52 @ VGS = 10V P 60V 4.0A 75 @ VGS = 4.5V P FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. SOP-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 D1 G1 S1 D2 G2 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousa @ TA = 25 °C -Pulse b Drain-Source Diode Forward Current a Maximum Power Dissipationa TA=25ºC TA=75ºC Avalanche Energy with Single Pulse L=0.1mH Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD EAS TJ,TSTG Limit 60 ± 20 5.0 26 3.1 2.0 1.2 11 - 55 to 150 Unit V V A A A W mJ °C THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambienta ：Note a. Surface Mounted on FR4 Board , t ≤ 10sec . b. Pulse width limited by maximum junction temperature. RthJA 1 62.5 °C/W 1 page

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PDF 4946 Data sheet ( Hoja de datos )