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PDF TPCA8107-H Data sheet ( Hoja de datos )
| Número de pieza | TPCA8107-H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TPCA8107-H (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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TPCA8107-H
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII)
TPCA8107-H
High-Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
CCFL Inverter Applications
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 9.7 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 24 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 14 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −40 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
1.27 0.4 ± 0.1
8 0.05 M A
5
0.15 ± 0.05
4 0.595
1
A
5.0 ± 0.2
0.05 S
S
14
Characteristic
Symbol
Rating
Unit
4.25 ± 0.2
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc = 25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc = 25℃) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
PD
EAS
IAR
EAR
Tch
Tstg
−40
−40
±20
−7.5
−30
30
2.8
1.6
26
−7.5
1.9
150
−55 to 150
V
V
V
A
W
W
W
mJ
A
mJ
°C
°C
85
1,2,3: SOURCE 4: GATE
5,6,7,8: DRAIN
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8765
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
1234
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2008-10-06
1 page  
RDS (ON) – Ta
50
Common source
Pulse test
40
−3.8
ID = −7.5 A
−1.9
30
VGS = −4.5 V
20
−10 V
10
ID = −1.9/−3.8/−7.5 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCA8107-H
−100
Common source
Ta = 25°C
Pulse test
IDR – VDS
−10 −4.5 −3
−10
−1
−0.1
0
−1 VGS = 0 V
0.2 0.4 0.6 0.8 1.0
Drain-source voltage VDS (V)
1.2
10000
Capacitance – VDS
1000
Ciss
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
−0.1
−1
Crss
−10 −100
Drain-source voltage VDS (V)
Vth – Ta
−2.0
−1.6
−1.2
−0.8
−0.4
Common source
VDS = −10 V
ID = −1 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
Dynamic input/output
characteristics
−50
Common source
ID = −7.5 A
Ta = 25°C
−40 Pulse test
VDS
−30
−20
−16
−8
VDD = −32 V
−10 VGS
−20
−16
−12
−8
−4
00
0 10 20 30 40 50
Total gate charge Qg (nC)
5
2008-10-06
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCA8107-H.PDF ] | |
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