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PDF TPCA8108 Data sheet ( Hoja de datos )
| Número de pieza | TPCA8108 | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCA8108
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
TPCA8108
High-Side Switching Applications
Motor Drive Applications
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 7.7 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 41S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −40 V)
• Enhancement mode: Vth = −1.5 to −3.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
0.5±0.1 1.27 0.4±0.1
85
Unit: mm
0.05 M A
0.15±0.05
0.95±0.05
14
5.0±0.2
0.595
A
0.166±0.05
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
PD
PD
EAS
IAR
EAR
Tch
Tstg
Rating
−40
−40
±20
−40
−120
45
2.8
Unit
V
V
V
A
W
W
1.6 W
148
−40
4.5
150
−55 to 150
mJ
A
mJ
°C
°C
S 0.05 S
1 4 1.1±0.2
4.25±0.2
8
1,2,3:SOURCE
5,6,7,8:DRAIN
5 0.8±0.1
4:GATE
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-5Q1A
Weight: 0.080 g (typ.)
Circuit Configuration
8765
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
Using continuously under heavy loads (e.g. the application of high
1234
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please
design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure
rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
http://store.iiic.cc/
2008-06-26
1 page  
30
Common source
Pulse test
25 VGS = −10 V
RDS (ON) – Tc
20
15
ID = −10, −20, −40 A
10
5
0
−80 −40
0
40 80 120 160
Case temperature Tc (°C)
TPCA8108
−1000
IDR – VDS
−100
−5
−10
−3
−10
0 VGS = 1 V
Common source
Tc = 25°C
Pulse test
−1
0 0.2 0.4 0.6 0.8
1 1.2
Drain−source voltage VDS (V)
10000
Capacitance – VDS
Ciss
1000
Coss
Crss
100
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
10
0.1
1
10
Drain−source voltage VDS (V)
100
Vth – Tc
−3
Common source
VGS = −10 V
−2.5
ID = −1mA
Pulse test
−2
−1.5
−1
−0.5
0
−80 −40
0
40 80 120 160
Case temperature Tc (°C)
3.0
(1)
2.5
2.0
(2)
1.5
PD – Ta
(1) Device mounted on a
glass-epoxyboard (a) (Note 2a)
(2) Device mounted on a
glass-epoxyboard (b) (Note 2b)
t = 10 s
1.0
0.5
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
−80
Common source
ID = −40 A
Tc = 25°C
Pulse test
−60
−16
−40
VDS
−8
VDD = −32V
−20 VGS
−16
−12
−8
−4
00
0 40 80 120 160
Total gate charge Qg (nC)
5
http://store.iiic.cc/
2008-06-26
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCA8108.PDF ] | |
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