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PDF TPCC8007 Data sheet ( Hoja de datos )

Número de pieza TPCC8007
Descripción MOSFETs
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! TPCC8007 Hoja de datos, Descripción, Manual

MOSFETs Silicon N-channel MOS (U-MOS)
TPCC8007
1. Applications
• Notebook PCs
• Mobile Handsets
2. Features
(1) Small footprint due to a small and thin package
(2) Low drain-source on-resistance: RDS(ON) = 3.5 m(typ.) (VGS = 4.5 V)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
(4) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TPCC8007
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
TSON Advance
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 20 V
Gate-source voltage
VGSS
±12
Drain current (DC)
(Note 1)
ID
27 A
Drain current (pulsed)
(Note 1)
IDP
81
Power dissipation
(Tc = 25)
PD 30 W
Power dissipation
(t = 10 s)
(Note 2)
PD
1.9 W
Power dissipation
(t = 10 s)
(Note 3)
PD
0.7 W
Single-pulse avalanche energy
(Note 4)
EAS
190 mJ
Avalanche current
IAR 27 A
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2011-06-09
Rev.4.0

1 page




TPCC8007 pdf
8. Characteristics Curves (Note)
TPCC8007
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta
5 2011-06-09
Rev.4.0

5 Page










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