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AP3R604GMT-HF fiches techniques PDF

Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP3R604GMT-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP3R604GMT-HF fiche technique
Advanced Power
Electronics Corp.
AP3R604GMT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
SO-8 Compatible with Heatsink
D
Low On-resistance
G
RoHS Compliant & Halogen-Free
S
Description
AP3R604 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
BVDSS
RDS(ON)
ID
40V
3.6mΩ
120A
D
D
D
D
S
S
S
G
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TA=25
ID@TA=70
IDM
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
40 V
+20 V
120 A
29 A
23 A
250 A
PD@TC=25
PD@TA=25
EAS
TSTG
TJ
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
83.3
5
28.8
-55 to 150
-55 to 150
W
W
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data & specifications subject to change without notice
Value
1.5
25
Units
/W
/W
1
201501062

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