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YG835C03R fiches techniques PDF

Fuji Electric - SCHOTTKY BARRIER DIODE

Numéro de référence YG835C03R
Description SCHOTTKY BARRIER DIODE
Fabricant Fuji Electric 
Logo Fuji Electric 





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YG835C03R fiche technique
YG835C03R
SCHOTTKY BARRIER DIODE
(30V / 25A TO-22OF15)
Outline Drawings
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
1.2±0.2
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
JEDEC
EIAJ
SC-67
Connection Diagram
2
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1
3
Item
Symbol
Conditions
Rating
Unit
Repetitive peak reverse voltage
VRRM
30 V
Repetitive peak surge reverse voltage
Isolating voltage
Average output current
Suege current
VRSM
Viso
IO
IFSM
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=99°C
Square wave
Sine wave 10ms
30
1500
25*
120
V
V
A
A
Operating junction temperature
Tj
+150
°C
Storage temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
-40 to +150
°C
* Out put current of centertap full wave connection.
Max.
Unit
Forward voltage drop **
VF IF=6.0A
0.45 V
Reverse current **
IR VR=VRRM
15.0 mA
Thermal resistance
Mechanical Characteristics
Rth(j-c)
Junction to case
2.5 °C/W
** Rating per element
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.0
N·m
g
A-456

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