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Numéro de référence | AP02N40J-HF-3 | ||
Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
Fabricant | Advanced Power Electronics | ||
Logo | |||
Advanced Power
Electronics Corp.
AP02N40H/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
100% Avalanche Test
Fast Switching Characteristics
RoHS-compliant, halogen-free
G
D
S
BV DSS
R DS(ON)
ID
400V
5Ω
1.6A
Description
D (tab)
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
G D S TO-252 (H)
The AP02N40H-HF-3 is in the TO-252 package which is widely preferred for
commercial and industrial surface mount applications such as medium-power
DC/DC converters. The through-hole TO-251 version (AP02N40J-HF-3) is
available where a small PCB footprint is required.
GD
S
Absolute Maximum Ratings
D (tab)
TO-251 (J)
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
EAS
IAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
400
±30
1.6
1
3
33
0.26
5
1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
mJ
A
°C
°C
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Maximum Thermal Resistance, Junction-ambient
Value
3.8
62.5
110
Units
°C/W
°C/W
°C/W
Ordering Information
AP02N40H-HF-3TR : in RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel)
AP02N40J-HF-3TB : in RoHS-compliant halogen-free TO-251 shipped in tubes (80pcs/tube)
©2011 Advanced Power Electronics Corp. USA
www.a-powerusa.com
201003172-3 1/6
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Pages | Pages 6 | ||
Télécharger | [ AP02N40J-HF-3 ] |
No | Description détaillée | Fabricant |
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