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AP02N90I-HF-3 fiches techniques PDF

Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP02N90I-HF-3
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP02N90I-HF-3 fiche technique
Advanced Power
Electronics Corp.
AP02N90I-HF-3
N-channel Enhancement-mode Power MOSFET
Fully isolated package
Simple Drive Requirement
Fast Switching Performance
RoHS-compliant, halogen-free
G
D
S
BV DSS
RDS(ON)
ID
900V
7.2
1.9A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP02N90I-HF-3 is in the TO-220CFM isolated through-hole package
which is widely used in commercial and industrial applications where a
small PCB footprint or an attached isolated heatsink is required.
This device is well suited for use in high voltage applications such as
off-line AC/DC converters.
G
D S TO-220CFM (I)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
EAS
IAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy3
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
900
±30
1.9
1.2
6
34.7
36
1.9
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
A
°C
°C
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
3.6
62
Units
°C/W
°C/W
Ordering Information
AP02N90I-HF-3TB : in RoHS-compliant halogen-free TO-220CFM, shipped in tubes (50pcs/tube)
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200604182-3 1/5

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