Datasheet SIC9553-PDF.HTML Equivalent ( PDF )

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SIC Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	SIC02A065NS	SILICON CARBIDE SCHOTTKY DIODE SiC02A065NS SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 2A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: M	Pan Jit International	diode
2	SIC02A065T	SILICON CARBIDE SCHOTTKY DIODE SiC02A065T SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 2A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: Mo	Pan Jit International	diode
3	SIC02A120S	SILICON CARBIDE SCHOTTKY DIODE SiC02A120S SILICON CARBIDE SCHOTTKY DIODE Voltage 1200 V Current 2A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: Mol	Pan Jit International	diode
4	SIC04A065ND	SILICON CARBIDE SCHOTTKY DIODE SiC04A065ND SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 4A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: M	Pan Jit International	diode
5	SIC04A065NS	SILICON CARBIDE SCHOTTKY DIODE SiC04A065NS SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 4A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: M	Pan Jit International	diode
6	SIC04A065T	SILICON CARBIDE SCHOTTKY DIODE SiC04A065T SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 4A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: Mo	Pan Jit International	diode
7	SiC06A065ND	SILICON CARBIDE SCHOTTKY DIODE SiC06A065ND SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 6A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: M	Pan Jit International	diode

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Número de pieza	Descripción	Fabricantes	PDF
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