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AP2612GY-HF Datasheet دیتاشیت PDF دانلود

دیتاشیت - Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

شماره قطعه AP2612GY-HF
شرح مفصل N-CHANNEL ENHANCEMENT MODE POWER MOSFET
تولید کننده Advanced Power Electronics 
آرم Advanced Power Electronics 


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AP2612GY-HF شرح
Advanced Power
Electronics Corp.
AP2612GY-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Capable of 1.8V Gate Drive
Simple Drive Requirement
Surface Mount Device
RoHS Compliant
S
D
D
SOT-26
G
D
D
BVDSS
RDS(ON)
ID
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The S0T-26 package is widely used for commercial-industrial surface
mount applications.
G
30V
35mΩ
6A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 4.5V
Continuous Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+8
6
4.7
20
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201103241

قانون اساسیصفحه 4
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دیتاشیت توصیه

شماره قطعه شرح مفصل تولید کنندگان
AP2612GY-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
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