(PDF) AP2306AGEN-HF Datasheet - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	AP2306AGEN-HF
Descripción	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	Advanced Power Electronics
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No Preview Available ! Advanced Power Electronics Corp. AP2306AGEN-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive ▼ Small Outline Package ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free D S SOT-23 G BVDSS RDS(ON) ID Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effectiveness device. The SOT-23 package is widely used for commercial-industrial applications. G 30V 50mΩ 4.1A D S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS ID@TA=25℃ ID@TA=70℃ IDM Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.5V Pulsed Drain Current1 PD@TA=25℃ TSTG TJ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 30 +6 4.1 3.3 16 1.38 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 90 Unit ℃/W 1 201208081 1 page

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PDF AP2306AGEN-HF Data sheet ( Hoja de datos )