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AP3402GEH Datasheet دیتاشیت PDF دانلود

دیتاشیت - Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

شماره قطعه AP3402GEH
شرح مفصل N-CHANNEL ENHANCEMENT MODE POWER MOSFET
تولید کننده Advanced Power Electronics 
آرم Advanced Power Electronics 


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AP3402GEH شرح
Advanced Power
Electronics Corp.
AP3402GEH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Single Drive Requirement
Surface Mount Package
RoHS Compliant
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP3402GEJ) are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
35V
18mΩ
38A
GD
S
TO-252(H)
G
DS
TO-251(J)
Rating
35
±20
38
24
110
34.7
0.27
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
3.6
110
Units
/W
/W
Data and specifications subject to change without notice
Downloaded from Elcodis.com electronic components distributor
200420052-1/4

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